dmn 62d 1 lf d document number: ds 36476 rev. 2 - 2 1 of 7 www.diodes.com july 2017 ? diodes incorporated advance information new product new product dmn 62d 1 lf d n - channel enhancement mode mosfet product summary b v dss r ds(on) i d t a = + 25c 6 0v 2 ? @ v gs = 4 v 400 ma 2.5 ? @ v gs = 2 .5v 350 m a description and applications this new generation mosfet is designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? ? ? ? features and benefits ? ? ? ? ? esd protected ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? ? ? ? ? ? ordering information (note 4) part number compliance case packaging dmn 62d 1 lfd - 7 standard u - dfn1212 - 3 3 , 000/tape & reel dmn 62d1 lfd - 13 standard u - dfn1212 - 3 10, 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green " products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 201 3 201 4 201 5 201 6 201 7 20 18 20 19 20 20 20 21 2022 2023 2024 2025 code a b c d e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view k 64 = product type marking code k 63 = product type marking code ym = date code marking y = year (ex: e = 201 7 ) m = month (ex: 9 = september) g pin k6 3 ym pin - out top view d s g equivalent circuit k6 4 ym esd protected d s g g ate protection diode e4
dmn 62d 1 lf d document number: ds 36476 rev. 2 - 2 2 of 7 www.diodes.com july 2017 ? diodes incorporated advance information new product new product dmn 62d 1 lf d maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 6 0 v gate - source voltage v gss 2 0 v continuous drain current (note 5 ) v gs = 4 v t a = + 25c t a = + 70 c i d 400 310 m a pulsed drain current (note 6 ) i dm 1 a thermal characteristics characteristic symbol max unit power dissipation (note 5 ) p d 0. 5 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 237 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical c haracteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 6 0 v v gs = 0v, i d = 250a zero gate voltage drain current t j = + 25c i dss 1 a v ds = 6 0 v, v gs = 0v gate - source leakage i gss 1 00 n a v gs = 5 v, v ds = 0v 500 na v gs = 10v, v ds = 0v 2 a v gs = 15v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 0. 6 1 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) 0.8 2 v gs = 4 v, i d = 1 00m a 1 2.5 v gs = 2 .5 v, i d = 50m a 1. 4 3 v gs = 1.8 v, i d = 50m a 1.8 v gs = 1 .5 v, i d = 10m a forward transfer admittance |y fs | 1.8 s v ds = 10 v, i d = 200m a diode forward voltage v sd 0. 8 1. 3 v v gs = 0v, i s = 1 15m a dynamic characteristics (note 8 ) input capacitance c iss 36 pf v ds = 2 5 v, v gs = 0v , f = 1 mhz output capacitance c oss 4.6 reverse transfer capacitance c rss 3.6 gate resistance r g 59.8 v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g 0.55 nc v gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs 0.08 gate - drain charge q gd 0.12 turn - on delay time t d( on ) 2.1 ns v gs = 10 v , v ds = 30 v , r l = 150 , r g = 25 , i d = 200ma turn - on rise time t r 2.8 ns turn - off delay time t d( off ) 21 ns turn - off fall time t f 13.9 ns notes: 5 . device mounted on fr - 4 pcb with minimum recommended pad layout, single sided . 6 . repetitive rating, pulse width limited by junction temperature. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing.
dmn 62d 1 lf d document number: ds 36476 rev. 2 - 2 3 of 7 www.diodes.com july 2017 ? diodes incorporated advance information new product new product dmn 62d 1 lf d i , drain current (a) d figure 5 typical on - resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs v , gate - source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 0.1 0.2 0.3 0.4 0.5 0 0.5 1 1.5 2 2.5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a i d , drain current ( a ) r d s( on ) , drain - source on - resistance ( ? v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 0.1 0.2 0.3 0.4 0.5 0 0.5 1 1.5 2 2.5 3 v = 1.2v gs v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.5 1 1.5 2 2.5 3 0 0.1 0.2 0.3 0.4 0.5 v = 2.5v gs v = 4.5v gs v = 1.8v gs v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 12 14 16 18 20 i = 100ma d i = 50ma d t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.8 1.2 1.6 2 2.4 -50 -25 0 25 50 75 100 125 150 v = 4v i = 200ma gs d v = v i = 100ma gs d 2.5
dmn 62d 1 lf d document number: ds 36476 rev. 2 - 2 4 of 7 www.diodes.com july 2017 ? diodes incorporated advance information new product new product dmn 62d 1 lf d 0 0.2 0.4 0.6 0.8 1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 1ma i d = 250 d , drain current (a) v ds , drain - source voltage (v) figure 12 soa, safe operation area t j (max) = 150 c = 25 gs = 4.5 v r ds(on) limited dc p w = 10s p w = 1s p w = 100ms p w = 10ms p w = 1ms p w = 100 s v , source - drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 0.1 0.2 0.3 0.4 0.5 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 150c a t = - 55c a t = 25c a t = 85c a i s , source current ( a ) t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 v = v i = 100ma gs d 2.5 v = v i = 200ma gs d 4 v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 1 10 100 0 10 20 30 40 f = 1mhz c iss c oss c rss q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v = 10v i = a ds d 250m
dmn 62d 1 lf d document number: ds 36476 rev. 2 - 2 5 of 7 www.diodes.com july 2017 ? diodes incorporated advance information new product new product dmn 62d 1 lf d r ja (t) = r(t) * r ja r ja = 234 /w duty cycle, d = t1 / t2 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 234 C /w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
dmn 62d 1 lf d document number: ds 36476 rev. 2 - 2 6 of 7 www.diodes.com july 2017 ? diodes incorporated advance information new product new product dmn 62d 1 lf d package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn 1212 - 3 ( type c ) suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn 1212 - 3 ( type c ) u - dfn1212 - 3 type c dim min max typ a 0.47 0 . 53 0.50 a1 0 0.05 0.02 a3 - - 0.13 b 0.2 7 0.3 7 0.32 b1 0. 17 0. 27 0.22 d 1. 1 5 1. 2 5 1.20 d2 0.75 0.95 0.85 e - - 0. 80 e 1. 1 5 1. 2 5 1.20 e2 0.40 0. 6 0 0.50 l 0.25 0.35 0.30 l 1 0. 6 5 0. 7 5 0.70 all dimensions in mm dimensions value (in mm) c 0.80 0 g 0. 200 x 0.320 x1 0.520 x2 1.050 y 0.450 y1 0. 250 y2 0. 850 x2 y2 y c x y1 x1 g a a3 seating plane a1 d e e l1 b b1 e2 d2 l
dmn 62d 1 lf d document number: ds 36476 rev. 2 - 2 7 of 7 www.diodes.com july 2017 ? diodes incorporated advance information new product new product dmn 62d 1 lf d important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes. com
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